The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2012
Filed:
Jul. 02, 2010
Applicants:
Yong-seok Eun, Gyeonggi-do, KR;
Eun-shil Park, Gyeonggi-do, KR;
Tae-yoon Kim, Gyeonggi-do, KR;
Min-soo Kim, Gyeonggi-do, KR;
Inventors:
Yong-Seok Eun, Gyeonggi-do, KR;
Eun-Shil Park, Gyeonggi-do, KR;
Tae-Yoon Kim, Gyeonggi-do, KR;
Min-Soo Kim, Gyeonggi-do, KR;
Assignee:
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for fabricating a semiconductor device includes forming a plurality of first trenches by etching a substrate, forming a plurality of buried bit lines in the first trenches, forming a plurality of second trenches to expose at least one sidewall of the buried bit lines by etching the substrate, and forming a plurality of one-sidewall contact plugs which fill the second trenches.