The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2012
Filed:
Oct. 28, 2010
Takeshi Kawashima, Tokyo, JP;
Katsuyuki Hoshino, Tokyo, JP;
Shoichi Kawashima, Kawasaki, JP;
Yasuhiro Nagatomo, Kawasaki, JP;
Takeshi Kawashima, Tokyo, JP;
Katsuyuki Hoshino, Tokyo, JP;
Shoichi Kawashima, Kawasaki, JP;
Yasuhiro Nagatomo, Kawasaki, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A manufacturing method of a microstructure which enables production of a deep and narrow microstructure in a GaN semiconductor with high precision is provided. The manufacturing method of a microstructure for forming a microscopic structure in a semiconductor has a configuration having a first step of forming a first GaN semiconductor layer on a substrate, a second step of forming a first hole by using etching on the first GaN semiconductor layer formed in the first narrow, and a third step of performing heat-treatment at a temperature from 850° C. to 950° C. inclusive under a gas atmosphere including nitrogen, in order to form a second narrow in which a diameter of the first hole h formed in the second step is made narrower than the diameter of the first hole in an in-plane direction of the substrate.