The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 06, 2012

Filed:

Mar. 03, 2010
Applicants:

Akira Imai, Tokyo, JP;

Junjiro Sakai, Tokyo, JP;

Inventors:

Akira Imai, Tokyo, JP;

Junjiro Sakai, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/00 (2006.01); G03C 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A mask having mask patterns for the transfer of a desired circuit pattern, a method for manufacturing the mask, and a semiconductor device manufacturing method using the mask, are provided. There are extracted two rectangular aperture patterns which are adjacent each other in an obliquely disposed state with respect to an X axis in an XY plane. The thus-extracted two rectangular aperture patterns are rotated at a certain angle so that a pattern edge corresponding to one side of one of the rectangular aperture patterns and a pattern edge corresponding to one side of the other rectangular aperture pattern are opposed in parallel to each other. The two rectangular aperture patterns thus rotated at a certain angle are then subjected to optical proximity effect correction to form two corrected rectangular aperture patterns.


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