The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2012
Filed:
Oct. 04, 2007
Junedong Lee, Hopewell Junction, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Dominic J. Schepis, Wappingers Falls, NY (US);
Junedong Lee, Hopewell Junction, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Dominic J. Schepis, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An SOI substrate has a gettering layer of silicon-germanium (SiGe) with 5-10% Ge, and a thickness of approximately 50-1000 nm. Carbon (C) may be added to SiGe to stabilize the dislocation network. The SOI substrate may be a SIMOX SOI substrate, or a bonded SOI substrate, or a seeded SOI substrate. The gettering layer may disposed under a buried oxide (BOX) layer. The gettering layer may be disposed on a backside of the substrate.