The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2012
Filed:
Mar. 18, 2008
Masayuki Takagishi, Kunitachi, JP;
Hitoshi Iwasaki, Yokosuka, JP;
Masahiro Takashita, Yokohama, JP;
Michiko Hara, Yokohama, JP;
Dan Abels, San Francisco, CA (US);
Xin LI, Milpitas, CA (US);
Masayuki Takagishi, Kunitachi, JP;
Hitoshi Iwasaki, Yokosuka, JP;
Masahiro Takashita, Yokohama, JP;
Michiko Hara, Yokohama, JP;
Dan Abels, San Francisco, CA (US);
Xin Li, Milpitas, CA (US);
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A current perpendicular to plane magneto-resistance effect element includes: a magneto-resistance effect film comprised of a fixed magnetization layer, a free magnetization layer, and a complex spacer layer including an insulating layer and current paths formed through the insulating layer; a biasing mechanism for stabilizing the free magnetization layer; a shielding mechanism for ensuring a reproducing resolution of the magneto-resistance effect element; and a pair of electrodes for flowing a current perpendicular to a film surface of the magneto-resistance effect element; wherein a resistance area product (RA:Ω×μm) is set to 0.00062×√{square root over ((GAP))}×TW+0.06 when a track width of the magneto-resistance effect element is defined as TW (nm) and a gap length of the magneto-resistance effect element is defined as GAP (nm).