The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2012
Filed:
Jul. 06, 2010
Toshio Hayashi, Shizuoka, JP;
Yasuhiro Morikawa, Shizuoka, JP;
Michio Ishikawa, Shizuoka, JP;
Yuji Furumura, Tokyo, JP;
Naomi Mura, Tokyo, JP;
Toshio Hayashi, Shizuoka, JP;
Yasuhiro Morikawa, Shizuoka, JP;
Michio Ishikawa, Shizuoka, JP;
Yuji Furumura, Tokyo, JP;
Naomi Mura, Tokyo, JP;
Philtech Inc., Tokyo, JP;
Abstract
A method for manufacturing a semiconductor device comprises dry-etching a thin film using a resist mask carrying patterns in which at least one of the width of each pattern and the space between neighboring two patterns ranges from 32 to 130 nm using a halogenated carbon-containing compound gas with the halogen being at least two members selected from the group consisting of F, I and Br. The ratio of at least one of I and Br is not more than 26% of the total amount of the halogen atoms as expressed in terms of the atomic compositional ratio to transfer the patterns onto the thin film. Such etching of a thin film avoids causing damage to the resist mask used. The resulting thin film carrying the transferred patterns is used as a mask for subjecting the underlying material to dry-etching.