The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2012
Filed:
Mar. 03, 2008
Milton J. Boden, Redondo Beach, CA (US);
Milton J. Boden, Redondo Beach, CA (US);
International Rectifier Corporation, El Segundo, CA (US);
Abstract
A trench gated MOSFET especially for operation in high radiation environments has a deep auxiliary trench located between the gate trenches. A boron implant is formed in the walls of the deep trench (in an N channel device); a thick oxide is formed in the bottom of the trench, and boron doped polysilicon which is connected to the source electrode fills the trench. The structure has reduced capacitance and improved resistance to single event rupture and single event breakdown and improved resistance to parasitic bipolar action.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile