The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2012
Filed:
Nov. 17, 2009
Hiroshi Ohta, Hyogo-ken, JP;
Wataru Saito, Kanagawa-ken, JP;
Syotaro Ono, Kanagawa-ken, JP;
Munehisa Yabuzaki, Kanagawa-ken, JP;
Nana Hatano, Kanagawa-ken, JP;
Miho Watanabe, Tokyo, JP;
Hiroshi Ohta, Hyogo-ken, JP;
Wataru Saito, Kanagawa-ken, JP;
Syotaro Ono, Kanagawa-ken, JP;
Munehisa Yabuzaki, Kanagawa-ken, JP;
Nana Hatano, Kanagawa-ken, JP;
Miho Watanabe, Tokyo, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
In a vertical power semiconductor device having the super junction structure both in a device section and a terminal section, an n-type impurity layer is formed on the outer peripheral surface in the super junction structure. This allows an electric field on the outer peripheral surface of the super junction structure region to be reduced. Accordingly, a reliable vertical power semiconductor device of a high withstand voltage can be provided.