The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2012

Filed:

Nov. 06, 2008
Applicants:

Yutaka Fukuda, Kariya, JP;

Yukio Tsuzuki, Nukata-gun, JP;

Inventors:

Yutaka Fukuda, Kariya, JP;

Yukio Tsuzuki, Nukata-gun, JP;

Assignee:

DENSO Corporation, Kariya, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/43 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes a semiconductor substrate, an insulated gate transistor formed to the semiconductor substrate, a diode formed to the semiconductor substrate, and a control transistor formed to the semiconductor substrate. A first current terminal of the insulated gate transistor is coupled to a cathode of the diode at a high potential side. A second current terminal of the insulated gate transistor is coupled to an anode of the diode at a low potential side. The control transistor is configured to turn off the insulated gate transistor by reducing a potential of a gate terminal of the insulated gate transistor when the diode conducts an electric current.


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