The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2012
Filed:
Sep. 21, 2010
Applicants:
Naomi Anzue, Osaka, JP;
Toshiya Yokogawa, Nara, JP;
Inventors:
Naomi Anzue, Osaka, JP;
Toshiya Yokogawa, Nara, JP;
Assignee:
Panasonic Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/36 (2010.01);
U.S. Cl.
CPC ...
Abstract
A nitride-based semiconductor device includes: a nitride-based semiconductor multilayer structure including a p-type semiconductor region, a surface of the p-type semiconductor region being an m-plane; and an electrode that is arranged on the p-type semiconductor region, wherein the p-type semiconductor region is made of an AlGaInN semiconductor (where x+y+z=1, x≧0, y≧0, and z≧0), and the electrode contains Mg, Zn and Ag.