The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2012

Filed:

May. 11, 2009
Applicants:

Masao Uchida, Hyogo, JP;

Kazuya Utsunomiya, Osaka, JP;

Koichi Hashimoto, Osaka, JP;

Inventors:

Masao Uchida, Hyogo, JP;

Kazuya Utsunomiya, Osaka, JP;

Koichi Hashimoto, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device is fabricated on an off-cut semiconductor substrate. Each unit cellthereof includes: a first semiconductor layeron the surface of the substrate; a second semiconductor layerstacked on the first semiconductor layerto have an openingthat exposes first and second conductive regionsandat least partially; a first conductorlocated inside the openingof the second semiconductor layerand having a conductive surfacethat contacts with the first and second conductive regionsand; and a second conductorarranged on the second semiconductor layerand having an openingcorresponding to the openingof the second semiconductor layer. In a plane that is defined parallel to the surface of the substrate, the absolute value of a difference between the respective lengths of the second semiconductor layerand the second conductoras measured in the off-cut direction is greater than the absolute value of their difference as measured perpendicularly to the off-cut direction.


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