The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2012
Filed:
Mar. 12, 2010
Applicants:
Hyun-young Kim, Seoul, KR;
Rak-hwan Kim, Suwon-si, KR;
Young-joo Cho, Suwon-si, KR;
Won-sik Shin, Seoul, KR;
Inventors:
Hyun-Young Kim, Seoul, KR;
Rak-Hwan Kim, Suwon-si, KR;
Young-Joo Cho, Suwon-si, KR;
Won-sik Shin, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/12 (2006.01); H01L 29/786 (2006.01); H01L 27/108 (2006.01); H01L 29/94 (2006.01);
U.S. Cl.
CPC ...
Abstract
A capacitor and method of manufacturing the same include an insulating interlayer, a lower electrode, a protection structure, a dielectric layer and an upper electrode. The insulating interlayer may include a conductive pattern formed on a substrate. The lower electrode may be electrically connected to the conductive pattern. The protection structure may be formed on an outer sidewall of the cylindrical lower electrode and on the insulating interlayer.