The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2012
Filed:
Oct. 19, 2007
Applicants:
Kazuo Takimiya, Higashihiroshima, JP;
Hideaki Ebata, Higashihiroshima, JP;
Hirokazu Kuwabara, Tokyo, JP;
Masaaki Ikeda, Tokyo, JP;
Tatsuto Yui, Tokyo, JP;
Inventors:
Kazuo Takimiya, Higashihiroshima, JP;
Hideaki Ebata, Higashihiroshima, JP;
Hirokazu Kuwabara, Tokyo, JP;
Masaaki Ikeda, Tokyo, JP;
Tatsuto Yui, Tokyo, JP;
Assignees:
Nippon Kayaku Kabushiki Kaisha, Tokyo, JP;
Hiroshima University, Hiroshima, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
Abstract
Disclosed is a field-effect transistor characterized by using a compound represented by the formula (1) below as a semiconductor material. (In the formula (1), Xand Xindependently represent a sulfur atom, a selenium atom or a tellurium atom; and Rand Rindependently represent an unsubstituted or halogeno-substituted C-Caliphatic hydrocarbon group.)