The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2012
Filed:
Nov. 16, 2005
Pietro Montanini, Melegnano, IT;
Paolo Riboli, Civesio Frazione S. Giuliano Milanese, IT;
Luca Zanotti, Agrate Brianza, IT;
Michele Palmieri, Agrate Brianza, IT;
Marta Mottura, Melegnano, IT;
Pietro Montanini, Melegnano, IT;
Paolo Riboli, Civesio Frazione S. Giuliano Milanese, IT;
Luca Zanotti, Agrate Brianza, IT;
Michele Palmieri, Agrate Brianza, IT;
Marta Mottura, Melegnano, IT;
STMicroelectronics S.R.L., Agrate Brianza (MI), IT;
Abstract
A method of fabricating a wafer-size photovoltaic cell module includes defining an integrated cellular structure of a light converting monolateral or bilateral junction diode in an epitaxially grown detachable layer including a first deposited metal current collecting terminal of the diode. The method also includes laminating onto the surface of the processed epitaxially grown detachable layer a film of an optical grade plastic material resistant to hydrofluoric acid solutions. The method further includes immersing the wafer in a hydrofluoric acid solution causing detachment of the epitaxially grown silicon layer laminated with the film, and polishing the surface of separation of the detached epitaxially grown layer and forming a second metal current collecting terminal of the diode by masked deposition of a metal at a temperature tolerable by the film.