The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2012

Filed:

Feb. 11, 2010
Applicants:

Ching-hsi Lin, Hsinchu, TW;

Chien-rong Huang, Hsinchu, TW;

Dimitre Zahariev Dimitrov, Hsinchu, TW;

Inventors:

Ching-Hsi Lin, Hsinchu, TW;

Chien-Rong Huang, Hsinchu, TW;

Dimitre Zahariev Dimitrov, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01); H01L 21/3105 (2006.01); H01L 21/00 (2006.01); H01L 31/0216 (2006.01); H01L 31/0236 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of fabricating a solar cell is provided. A saw damage removal process is performed on a silicon substrate. A dry surface treatment is performed to a surface of the silicon substrate on form an irregular surface. A metal-activated selective oxidation is performed to the irregular surface. By using an aqueous solution, the irregular surface is etched to form a nanotexturized surface of the silicon substrate. A dopant diffusion process is performed on the silicon substrate to form a P-N junction. An anti-reflection layer is formed on the silicon substrate. An electrode is formed on the silicon substrate.


Find Patent Forward Citations

Loading…