The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2012
Filed:
Feb. 24, 2010
Kyung-in Choi, Seoul, KR;
Sang-woo Lee, Seoul, KR;
Jong-myeong Lee, Gyeonggi-do, KR;
Jong-won Hong, Gyeonggi-do, KR;
Hyun-bae Lee, Seoul, KR;
Kyung-In Choi, Seoul, KR;
Sang-Woo Lee, Seoul, KR;
Jong-Myeong Lee, Gyeonggi-do, KR;
Jong-Won Hong, Gyeonggi-do, KR;
Hyun-Bae Lee, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Methods of forming a metal interconnection structure are provided. The methods include forming an insulating layer on a semiconductor substrate including a first metal interconnection. The insulating layer is patterned to form an opening that exposes the first metal interconnection. A first diffusion barrier layer is formed on the exposed first metal interconnection. After forming the first diffusion barrier layer, a second diffusion barrier layer is formed on the first diffusion barrier layer in the opening, the second diffusion barrier layer contacting a sidewall of the opening. A second metal interconnection is formed on the second diffusion barrier layer.