The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2012
Filed:
Jul. 08, 2010
Byoung-gue Min, Daejeon, KR;
Jongmin Lee, Daejeon, KR;
Seong-il Kim, Daejeon, KR;
Hyung Sup Yoon, Daejeon, KR;
Byoung-Gue Min, Daejeon, KR;
Jongmin Lee, Daejeon, KR;
Seong-Il Kim, Daejeon, KR;
Hyung Sup Yoon, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
Provided are a monolithic microwave integrated circuit device and a method for forming the same. The method includes: forming an sub-collector layer, a collector layer, a base layer, an emitter layer, and an emitter cap layer on a Heterojunction Bipolar Transistor (HBT) region and a PIN diode region of a substrate; forming an emitter pattern and an emitter cap pattern in the HBT region and exposing the base layer by patterning the emitter layer and the emitter cap layer; and forming an intrinsic region by doping a portion of the collector layer of the PIN diode region with a first type impurity, the PIN diode region being spaced apart from the HBT region.