The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2012
Filed:
Nov. 16, 2010
Applicant:
Tae Su Jang, Gwacheon, KR;
Inventor:
Tae Su Jang, Gwacheon, KR;
Assignee:
Hynix Semiconductor Inc., Icheon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/425 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for manufacturing a semiconductor device that includes forming a pillar pattern including a sidewall contact over a semiconductor substrate; forming a silicon layer in a lower portion disposed between the pillar patterns; implanting ions into the silicon layer; diffusing the implanted impurity ions into the inside of the pillar pattern to form an ion-implanting region; removing the silicon layer; and burying a conductive material in the lower portion disposed between the pillar patterns. The method can prevent a floating body effect by adding a process of a vertical channel transistor.