The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2012
Filed:
Mar. 26, 2010
Atsushi Yagishita, Yokohama, JP;
Atsushi Yagishita, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
There is provided a semiconductor device including: convex semiconductor layers formed on a semiconductor substrate via an insulating film; gate electrodes formed on a pair of facing sides of the semiconductor layers via a gate insulating film; a channel region formed of silicon between the gate electrodes in the semiconductor layers; a source extension region and a drain extension region formed of silicon germanium or silicon carbon on both sides of the channel region in the semiconductor layers; and a source region formed of silicon so as to adjoin to the opposite side of the channel region in the source extension region, and a drain region formed of silicon so as to adjoin to the opposite side of the channel region in the drain extension region in the semiconductor layers.