The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2012
Filed:
Dec. 28, 2010
Kazuma Tomizuka, Gunma, JP;
Hitoshi Yoshida, Gunma, JP;
Kazunori Hanaoka, Kanagawa, JP;
Mitsuo Oshimura, Tottori, JP;
Isao Ishida, Gunma, JP;
Yoshimi Kuroiwa, Gunma, JP;
Kazuma Tomizuka, Gunma, JP;
Hitoshi Yoshida, Gunma, JP;
Kazunori Hanaoka, Kanagawa, JP;
Mitsuo Oshimura, Tottori, JP;
Isao Ishida, Gunma, JP;
Yoshimi Kuroiwa, Gunma, JP;
Kyowa Hakko Kirin Co., Ltd, Tokyo, JP;
Abstract
The present invention relates to a method for producing a modified foreign chromosome(s) or a fragment(s) thereof, which comprises the steps of: (a) preparing a microcell comprising a foreign chromosome(s) or a fragment(s) thereof, and transferring said foreign chromosome(s) or a fragment(s) into a cell with high homologous recombination efficiency through its fusion with said microcell; (b) in said cell with high homologous recombination efficiency, inserting a targeting vector by homologous recombination into a desired site of said foreign chromosome(s) or a fragment(s) thereof, and/or a desired site of a chromosome(s) derived from said cell with high homologous recombination efficiency, thereby marking said desired site; and (c) in said cell with high homologous recombination efficiency, causing deletion and/or translocation to occur at the marked site of said foreign chromosome(s) or a fragment(s) thereof.