The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2012
Filed:
Jun. 06, 2008
Eiichi Soda, Ibaraki, JP;
Eiichi Soda, Ibaraki, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
The present invention provides a method for processing an etching-target film, which can achieve both of a highly precise dry etching process and a reduction of LER. A method for processing an etching-target film, comprises: forming, in sequence from the bottom, an organic mask layer, a silicon-containing layerand a resist layer, over an etching-target film; forming a predetermined pattern in the resist layerby a photolithography process; etching the silicon-containing layerthrough a mask of the resist layerby employing a first etching gas; etching the organic mask layerthrough a mask of the etched silicon-containing layerby employing a second etching gas; and etching the etching-target film through a mask of the etched organic mask layerby employing a third etching gas, wherein the first etching gas contains trifluoroiodomethane (CFI).