The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2012
Filed:
Sep. 18, 2007
Won Jae Joo, Seongnam-si, KR;
Chulhee Kim, Seongnam-si, KR;
Kwang Hee Lee, Suwon-si, KR;
Tae Lim Choi, Suwon-si, KR;
Won Jae Joo, Seongnam-si, KR;
Chulhee Kim, Seongnam-si, KR;
Kwang Hee Lee, Suwon-si, KR;
Tae Lim Choi, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Disclosed herein is a dendrimer, in which metallocene, which is an oxidation-reduction material, is located at a core, and a conjugated dendron is connected to the metallocene core by a linker compound, an organic active layer having the dendrimer, an organic memory device having the organic active layer and a method of manufacturing the organic active layer and the organic memory device. The organic memory device manufactured using a dendrimer having a metallocene core of example embodiments may have a shorter switching time, decreased operation voltage, decreased manufacturing cost and increased reliability, thereby realizing a highly-integrated large-capacity memory device.