The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2012
Filed:
Sep. 20, 2007
Jie Wang, Toyama, JP;
Yasuhiro Ogawa, Toyama, JP;
Katsuhiko Yamamoto, Toyama, JP;
Takashi Yokogawa, Tonami, JP;
Jie Wang, Toyama, JP;
Yasuhiro Ogawa, Toyama, JP;
Katsuhiko Yamamoto, Toyama, JP;
Takashi Yokogawa, Tonami, JP;
Hitachi Kokusai Electric Inc., Tokyo, JP;
Abstract
To provide a manufacturing method of a semiconductor device, comprising: loading a substrate, with a silicon surface exposed at a part of the substrate, into a processing chamber; heating an inside of said processing chamber; performing pre-processing of supplying at least silane-based gas, halogen-based gas, and hydrogen gas into said processing chamber, removing at least a natural oxide film or a contaminated matter that exist on a surface of said silicon surface, and growing an epitaxial film on said silicon surface; and supplying gas containing at least silicon into said processing chamber after said pre-processing, and further growing the epitaxial film on said epitaxial film.