The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2012
Filed:
Feb. 05, 2009
Applicants:
Yukio Terashima, Mishima, JP;
Yasuyuki Fujiwara, Shizuoka-ken, JP;
Inventors:
Yukio Terashima, Mishima, JP;
Yasuyuki Fujiwara, Shizuoka-ken, JP;
Assignee:
Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/36 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for producing a p-type SiC semiconductor single crystal, including: using a solution in which C is dissolved in a Si melt and 30 to 70 at. % Cr and 0.1 to 20 at. % Al, based on a total weight of the Si melt, Cr, and Al, are added to the Si melt, to grow a p-type SiC semiconductor single crystal on a SiC single crystal substrate from the solution.