The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2012
Filed:
Apr. 05, 2007
Shiro Yamazaki, Aichi, JP;
Makoto Iwai, Nagoya, JP;
Takanao Shimodaira, Nagoya, JP;
Takatomo Sasaki, Suita, JP;
Yusuke Mori, Suita, JP;
Fumio Kawamura, Suita, JP;
Shiro Yamazaki, Aichi, JP;
Makoto Iwai, Nagoya, JP;
Takanao Shimodaira, Nagoya, JP;
Takatomo Sasaki, Suita, JP;
Yusuke Mori, Suita, JP;
Fumio Kawamura, Suita, JP;
Toyoda Gosei Co., Ltd., Aichi-ken, JP;
NGK Insulators, Ltd., Aichi, JP;
Osaka University, Osaka, JP;
Abstract
In the flux method, a source nitrogen gas is sufficiently heated before feeding to an Na—Ga mixture. The apparatus of the invention is provided for producing a group III nitride based compound semiconductor. The apparatus includes a reactor which maintains a group III metal and a metal differing from the group III metal in a molten state, a heating apparatus for heating the reactor, an outer vessel for accommodating the reactor and the heating apparatus, and a feed pipe for feeding a gas containing at least nitrogen from the outside of the outer vessel into the reactor. The feed pipe has a zone for being heated together with the reactor by means of the heating apparatus, wherein the zone is heated inside the outer vessel and outside the reactor.