The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2012
Filed:
May. 05, 2010
Seon-taek Kim, Suwon-si, KR;
Yoon-young Kyung, Paju-si, KR;
Seon-taek Kim, Suwon-si, KR;
Yoon-young Kyung, Paju-si, KR;
Abstract
A circuit is operated to detect unstable memory cells from among a plurality of memory cells in at least one page. A determination is made from an initial status of data stored in a memory cell whether no read error occurs when the data is read at a standard read voltage level, whether a read error occurs and the read error is correctable, and whether a read error occurs and the read error is uncorrectable. Responsive to determining that a read error occurs that is correctable, a further determination is made as to whether the memory cell is correctable by reading the data stored in the memory cell at a correction read voltage level, which has a different voltage level from the standard read voltage level, and by determining whether a read error occurring in the data read at the correction read voltage level is correctable or uncorrectable.