The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2012
Filed:
Dec. 22, 2010
Arkadiy Lyakh, Marina del Rey, CA (US);
Richard Maulini, Los Angeles, CA (US);
Alexei Tsekoun, Los Angeles, CA (US);
C. Kumar N. Patel, Los Angeles, CA (US);
Arkadiy Lyakh, Marina del Rey, CA (US);
Richard Maulini, Los Angeles, CA (US);
Alexei Tsekoun, Los Angeles, CA (US);
C. Kumar N. Patel, Los Angeles, CA (US);
Pranalytica, Inc., Santa Monica, CA (US);
Abstract
A quantum cascade laser (QCL) having a bias-neutral design and a semiconductor with multiple layers of AlInAs/InGaAs. The first active region barrier has a thickness of less than fourteen angstroms, and the second active region barrier has a thickness of less than eleven angstroms. The lower active region wavefunction overlaps with each of the injector level wavefunctions. Also, the laser transition is vertical at a bias close to roll-over. The injector level' is above a lower laser level, the injector level′ is below the lower laser level, and the active region levelis confined to the active region. The lower laser levelis separated from the active region levelby the energy of the LO phonon. The remaining active region states and the remaining injector states are either above the lower laser levelor significantly below the active region level