The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2012
Filed:
Mar. 05, 2008
Eun-seok Park, Suwon-si, KR;
Jeong-hae Lee, Seoul, KR;
Young-eil Kim, Suwon-si, KR;
Jong-seok Kim, Hwaseong-si, KR;
Ick-jae Yoon, Seoul, KR;
Young-ho Ryu, Seoul, KR;
Jae-hyun Park, Seoul, KR;
Eun-seok Park, Suwon-si, KR;
Jeong-hae Lee, Seoul, KR;
Young-eil Kim, Suwon-si, KR;
Jong-seok Kim, Hwaseong-si, KR;
Ick-jae Yoon, Seoul, KR;
Young-ho Ryu, Seoul, KR;
Jae-hyun Park, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A line structure is provided which includes a ferroelectric film which is formed on at least one surface of both sides of a substrate and a permittivity of which changes according to a magnitude of an applied voltage, an inductor which is formed on a first side of the substrate, and a capacitor which has a capacitance corresponding to the permittivity of the ferroelectric film and the substrate.