The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8120138 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 21, 2012

Filed:

May. 06, 2009
Applicants:

David Michael Fried, Hopewell Junction, NY (US);

John Michael Hergenrother, Ridgefield, CT (US);

Sharee Jane Mcnab, Christchurch, NZ;

Michael J. Rooks, Briarcliff Manor, NY (US);

Anna Topol, Yorktown Heights, NY (US);

Inventors:

David Michael Fried, Hopewell Junction, NY (US);

John Michael Hergenrother, Ridgefield, CT (US);

Sharee Jane McNab, Christchurch, NZ;

Michael J. Rooks, Briarcliff Manor, NY (US);

Anna Topol, Yorktown Heights, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/544 (2006.01);
U.S. Cl.
CPC ...
Abstract

A structure for aligning a first set of features of a fabrication level of an integrated circuit chip to an electron beam alignment target. The structure including a first trench in a semiconductor substrate, the first trench extending from a top surface of the substrate into the substrate a first distance; an electron back-scattering layer in a bottom of the first trench; a dielectric capping layer in the trench over the back-scattering layer; and a second trench in the substrate, the second trench extending from the top surface of the substrate into the substrate a second distance, the second distance less than the first distance.


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