The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 2012

Filed:

Feb. 11, 2010
Applicants:

Norbert Krischke, Munich, DE;

Nicola Vannucci, Fuernitz, AT;

Sven Lanzerstorfer, Feldkirchen, AT;

Thomas Ostermann, Oberwinklern, AT;

Mathias Racki, Hilgertshausen-Tandern, DE;

Markus Zundel, Egmating, DE;

Inventors:

Norbert Krischke, Munich, DE;

Nicola Vannucci, Fuernitz, AT;

Sven Lanzerstorfer, Feldkirchen, AT;

Thomas Ostermann, Oberwinklern, AT;

Mathias Racki, Hilgertshausen-Tandern, DE;

Markus Zundel, Egmating, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract

A transistor has a cell array with two or more transistor cells, a temperature sensor, which is integrated in the cell array or is adjacent to the cell array, and an isolation structure. The isolation structure isolates the temperature sensor from the cell array, and has an isolation trench, which is arranged between the cell array and the temperature sensor. The distance between the temperature sensor and the active transistor cell that is closest to the temperature sensor corresponds approximately to the pitch between active transistor cells within the cell array.


Find Patent Forward Citations

Loading…