The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2012
Filed:
Dec. 22, 2008
Masahiko Takeuchi, Tokyo, JP;
Masahiko Takeuchi, Tokyo, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
Shared contact holes SCand SCreach both gate electrode layers GEand GEand a drain region PIR. In a planar view, a sidewall Eof gate electrode layers GEand GEis shifted toward a side of a sidewall Efrom a virtual extended line Eof the sidewall E. In a planar view, a center line of a line width Din a portion that shared contact holes SCand SCof gate electrode layers GEand GEreach is located while shifted with respect to a center line of a line width Din a portion located on channel formation regions CHNand CHNof gate electrode layers GEand GE. Therefore, a semiconductor device and a photomask that can suppress an opening defect of the shared contact hole are obtained.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile