The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2012
Filed:
Aug. 07, 2009
Applicants:
Taiga Arai, Mito, JP;
Mutsuhiro Mori, Mito, JP;
Inventors:
Taiga Arai, Mito, JP;
Mutsuhiro Mori, Mito, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device which can avoid increase of a conduction loss of an IGBT, secure a low noise characteristic and also reduce a switch loss. The switching device is of a trench gate type, in which a drift nlayeris exposed to its main surface to a floating p layerand to trench gates. In other words, the floating p layeris provided within the drift nlayerto be spaced from the trench gates.