The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2012
Filed:
Apr. 18, 2008
Applicants:
Min She, Fremont, CA (US);
Chih-hsin Wang, San Jose, CA (US);
Inventors:
Min She, Fremont, CA (US);
Chih-Hsin Wang, San Jose, CA (US);
Assignee:
Marvell International Ltd., Hamilton, BM;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
Memory cells and arrays have reduced bit line resistance. An element conductor is disposed on the top of the bit line to reduce the resistance of the bit line while maintaining a shallow bit line junction so that 200 Ohm/square or lower sheet resistances are achieved with the bit line junctions typically 20 nanometers or shallower while the doping levels in the junctions are below about 5×10atoms/cm.