The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2012
Filed:
Sep. 07, 2006
Byung-eun Park, Seoul, KR;
Byung-Eun Park, Seoul, KR;
Abstract
Disclosed relates to a ferroelectric memory device that is manufactured easily, operates at low voltage and has excellent data preservation period, and a method of manufacturing the same. In the present invention, a ferroelectric layeris formed on a part corresponding to a channel regionon the silicon substrate. The ferroelectric layermade of an organic material such as PVDF, etc. shows polarization characteristics at low voltage below 1V, and such polarization characteristics continue over a specific time period, not changed as time goes by. Accordingly, it is possible to manufacture a ferroelectric memory device that operates at low voltage and is manufactured with a simplified structure in a simplified method.