The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8120047 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 21, 2012

Filed:

Dec. 29, 2009
Applicants:

Chang Tae Kim, Seongnam-si, KR;

Min Gyu NA, Gimje-si, KR;

Inventors:

Chang Tae Kim, Seongnam-si, KR;

Min Gyu Na, Gimje-si, KR;

Assignee:

Epivalley Co., Ltd., Gumi, Gyungbuk, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
Abstract

The present disclosure relates to a III-nitride semiconductor light-emitting device including a substrate with a first groove and a second groove formed therein, the substrate including a first surface and a second surface opposite to the first surface, a plurality of III-nitride semiconductor layers including a first semiconductor layer formed over the first surface of the substrate, a second semiconductor layer formed over the first III-nitride semiconductor layer, and an active layer disposed between the first and second III-nitride semiconductor layers and generating light by recombination of electrons and holes, a first opening formed on the first groove, a second opening formed on the second groove, a first electrode electrically connected from the second surface to the first III-nitride semiconductor layer through the first groove, and a second electrode electrically connected from the second surface to the second III-nitride semiconductor layer through the second groove and the second opening.


Find Patent Forward Citations

Kim, Chang. (2012). Iii-nitride semiconductor light emitting device (U.S. Patent No. 8120047). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8120047

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…