The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2012
Filed:
Nov. 15, 2007
Applicant:
Nobuyuki Watanabe, Mihara, JP;
Inventor:
Nobuyuki Watanabe, Mihara, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka-shi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor light-emitting device has an n-type DBR layer (), an n-type cladding layer (), an active layer (), a p-type cladding layer (), a p-type intermediate layer (), a p-type contact layer (), a p-type transparent substrate (), ohmic electrodes (and), and a reflecting layer (). The n-type DBR layer () has reflectivity for the emission wavelength of the active layer ().