The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2012
Filed:
May. 06, 2009
Kyung-bae Park, Seoul, KR;
Myung-kwan Ryu, Yongin-si, KR;
Byung-wook Yoo, Yongin-si, KR;
Sang-yoon Lee, Seoul, KR;
Tae-sang Kim, Seoul, KR;
Jang-yeon Kwon, Seongnam-si, KR;
Kyung-seok Son, Seoul, KR;
Ji-sim Jung, Incheon, KR;
Kyung-bae Park, Seoul, KR;
Myung-kwan Ryu, Yongin-si, KR;
Byung-wook Yoo, Yongin-si, KR;
Sang-yoon Lee, Seoul, KR;
Tae-sang Kim, Seoul, KR;
Jang-yeon Kwon, Seongnam-si, KR;
Kyung-seok Son, Seoul, KR;
Ji-sim Jung, Incheon, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Disclosed is a thin film transistor (TFT). The TFT may include an intermediate layer between a channel and a source and drain. An increased off current, which may occur to a drain area of the TFT, is reduced due to the intermediate layer. Accordingly, the TFT may be stably driven.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile