The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2012
Filed:
Nov. 18, 2009
Takayoshi Takano, Kawanishi, JP;
Kenji Tsubaki, Katano, JP;
Hideki Hirayama, Asaka, JP;
Sachie Fujikawa, Osaka, JP;
Takayoshi Takano, Kawanishi, JP;
Kenji Tsubaki, Katano, JP;
Hideki Hirayama, Asaka, JP;
Sachie Fujikawa, Osaka, JP;
Panasonic Electric Works Co., Ltd., Osaka, JP;
Riken, Saitama, JP;
Abstract
A nitride semi-conductor light emitting device has a p-type nitride semi-conductor layer, an n-type nitride semi-conductor layer, and a light emission layerwhich is interposed between the p-type nitride semi-conductor layerand the n-type nitride semi-conductor layer. The light emission layerhas a quantum well structure with a barrier layerand a well layer. The barrier layeris formed of AlGaInN (0<a<1, 0<b<1, 1−a−b>0), and contains a first impurity at a concentration of A greater than zero. The well layeris formed of AlGaInN (0<c<1, c<a, 0<d<1, 1−c−d>0), and contains a second impurity at a concentration of B equal to or greater than zero. In the nitride semi-conductor light emitting device of the present invention, the concentration of A is larger than that of B, in order that the barrier layerhas a concentration of oxygen smaller than that in the well layer