The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2012
Filed:
Sep. 22, 2006
Soo-jin Chua, Crescent, SG;
Peng Chen, Nanjing, CN;
Zhen Chen, Columbia, SC (US);
Eiryo Takasuka, Itami, JP;
Soo-Jin Chua, Crescent, SG;
Peng Chen, Nanjing, CN;
Zhen Chen, Columbia, SC (US);
Eiryo Takasuka, Itami, JP;
Agency for Science, Technology and Research, Centros, SG;
Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;
Abstract
A white-light emitting diode comprises an n-type semiconductor layer, one or more quantum well structures formed over the n-type semiconductor layer, a p-type semiconductor layer formed on the quantum well structure, a first electrode formed on the p-type semiconductor, and a second electrode formed on at least a portion of the n-type semiconductor layer. Each quantum well structure includes an InGaN quantum well layer, an InGaN barrier layer (x>0.3 or x=0.3), and InGaN quantum dots, where x<y<z≦1.