The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 2012

Filed:

Dec. 14, 2010
Applicants:

Michie Sunayama, Yokohama, JP;

Noriyoshi Shimizu, Tokyo, JP;

Inventors:

Michie Sunayama, Yokohama, JP;

Noriyoshi Shimizu, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

A first film containing a first metal material having a diffusion preventing function for copper, a second film containing oxygen-contained copper film, a third film containing copper and a second metal material which exhibits a diffusion preventing function for copper by bonding with oxygen, and a fourth film of copper as the main material are formed in an opening formed in an insulating film, and then a barrier layer containing the first metal material, the second metal material and oxygen is formed by thermal processing between the insulating film and the fourth film.


Find Patent Forward Citations

Sunayama, Michie. (2012). Method of manufacturing semiconductor device (U.S. Patent No. 8119524). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8119524

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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