The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2012
Filed:
Apr. 05, 2011
Bogdan Govoreanu, Hulshout, BE;
Hongyu Yu, Singapore, SG;
Hag-ju Cho, Seoul, KR;
IMEC, Leuven, BE;
Abstract
A non-volatile memory device having a control gate on top of the second dielectric (interpoly or blocking dielectric), at least a bottom layer of the control gate in contact with the second dielectric being constructed in a material having a predefined high work-function and showing a tendency to reduce its work-function when in contact with a group of certain high-k materials after full device fabrication. At least a top layer of the second dielectric, separating the bottom layer of the control gate from the rest of the second dielectric, is constructed in a predetermined high-k material, chosen outside the group for avoiding a reduction in the work-function of the material of the bottom layer of the control gate. In the manufacturing method, the top layer is created in the second dielectric before applying the control gate.