The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2012
Filed:
Dec. 17, 2009
Won-cheol Jeong, Seoul, KR;
Hyeong-jun Kim, Seoul, KR;
Se-ho Lee, Seoul, KR;
Jae-hyun Park, Yongin-si, KR;
Chang-wook Jeong, Seoul, KR;
Won-Cheol Jeong, Seoul, KR;
Hyeong-Jun Kim, Seoul, KR;
Se-Ho Lee, Seoul, KR;
Jae-Hyun Park, Yongin-si, KR;
Chang-Wook Jeong, Seoul, KR;
Abstract
A phase-change random-access memory (PRAM) device includes a chalcogenide element, the chalcogenide element comprising a material which can assume a crystalline state or an amorphous state upon application of a heating current. A first contact is connected to a first region of the chalcogenide element and has a first cross-sectional area. A second contact is connected to a second region of the chalcogenide element and having a second cross-sectional area. A first programmable volume of the chalcogenide material is defined in the first region of the chalcogenide element, a state of the first programmable volume being programmable according to a resistance associated with the first contact. A second programmable volume of the chalcogenide material is defined in the second region of the chalcogenide element, a state of the second programmable volume being programmable according to a second resistance associated with the second contact.