The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2012
Filed:
Jun. 30, 2009
Chan-woo Park, Daejeon, KR;
Chang-geun Ahn, Daejeon, KR;
Jong-heon Yang, Daejeon, KR;
In-bok Baek, Cheongju-si, KR;
Chil-seong Ah, Daejeon, KR;
An-soon Kim, Daejeon, KR;
Tae-youb Kim, Seoul, KR;
Gun-yong Sung, Daejeon, KR;
Seon-hee Park, Daejeon, KR;
Chan-Woo Park, Daejeon, KR;
Chang-Geun Ahn, Daejeon, KR;
Jong-Heon Yang, Daejeon, KR;
In-Bok Baek, Cheongju-si, KR;
Chil-Seong Ah, Daejeon, KR;
An-Soon Kim, Daejeon, KR;
Tae-Youb Kim, Seoul, KR;
Gun-Yong Sung, Daejeon, KR;
Seon-Hee Park, Daejeon, KR;
Electronics and Telecommunications Research Institute, Daejeon, KR;
Abstract
Provided are a method of manufacturing a semiconductor nanowire sensor device and a semiconductor nanowire sensor device manufactured according to the method. The method includes preparing a first conductive type single crystal semiconductor substrate, forming a line-shaped first conductive type single crystal pattern from the first conductive type single crystal semiconductor substrate, forming second conductive type epitaxial patterns on both sidewalls of the first conductive type single crystal pattern, and forming source and drain electrodes at both ends of the second conductive type epitaxial patterns.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile