The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2012
Filed:
Dec. 10, 2007
Applicants:
Satoshi Tamura, Osaka, JP;
Hiroshi Ohno, Osaka, JP;
Norio Ikedo, Osaka, JP;
Masao Kawaguchi, Osaka, JP;
Inventors:
Satoshi Tamura, Osaka, JP;
Hiroshi Ohno, Osaka, JP;
Norio Ikedo, Osaka, JP;
Masao Kawaguchi, Osaka, JP;
Assignee:
Pansonic Corporation, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract
A p-type GaN guiding layer, an n-type GaN layer, and an n-type AlGaN current blocking layer are sequentially formed over an active layer, and then part of the current blocking layer is etched by using an alkali solution and irradiating the part with light to form an opening. Thereafter, a second p-type GaN guiding layer is formed on the current blocking layer to cover the opening. In this structure, the GaN layer has a smaller energy gap than the AlGaN current blocking layer.