The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 2012

Filed:

Jan. 08, 2010
Applicants:

Woojin Cho, Yongin-si, KR;

Jaeseung Hwang, Suwon-si, KR;

Sukhun Choi, Suwon-si, KR;

Dae Kyom Kim, Daejeon, KR;

Junghyeon Kim, Hwaseong-si, KR;

Inventors:

Woojin Cho, Yongin-si, KR;

Jaeseung Hwang, Suwon-si, KR;

Sukhun Choi, Suwon-si, KR;

Dae Kyom Kim, Daejeon, KR;

JungHyeon Kim, Hwaseong-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

There are provided a magnetic memory device and a method of forming the magnetic memory device. The method of forming the magnetic memory device includes sequentially forming a first magnetic conductor, a tunnel barrier layer, and a second magnetic conductor on a substrate, forming a mask pattern on the second magnetic conductor, performing a primary etching of the second magnetic conductor by using the mask pattern as an etching mask, forming at least one spacer on sidewalls of the second magnetic conductor formed by the primary etching, and performing a secondary etching of the first magnetic conductor by using the mask pattern and the at least one spacers as an etching mask.


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