The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2012
Filed:
Dec. 26, 2007
Akihiko Ueda, Hyogo, JP;
Kiichi Meguro, Hyogo, JP;
Yoshiyuki Yamamoto, Hyogo, JP;
Yoshiki Nishibayashi, Hyogo, JP;
Takahiro Imai, Hyogo, JP;
Akihiko Ueda, Hyogo, JP;
Kiichi Meguro, Hyogo, JP;
Yoshiyuki Yamamoto, Hyogo, JP;
Yoshiki Nishibayashi, Hyogo, JP;
Takahiro Imai, Hyogo, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
A method for growing a low-resistance phosphorus-doped epitaxial thin film having a specific resistance of 300 Ωcm or less at 300 K on a principal surface of a {111} monocrystal substrate under conditions in which the phosphorus atom/carbon atom ratio is 3% or higher, includes the principal surface having an off-angle of 0.50° or greater. The diamond monocrystal having a low-resistance phosphorus-doped diamond epitaxial thin film is such that the thin-film surface has an off-angle of 0.50° or greater with respect to the {111} plane, and the specific resistance of the low-resistance phosphorus-doped diamond epitaxial thin film is 300 Ωcm or less at 300 K.