The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2012
Filed:
Jul. 11, 2008
Jang-yeon Hwang, Seoul, KR;
Dong-ryul Kim, Daejeon Metropolitan, KR;
Gi-cheul Kim, Daejeon Metropolitan, KR;
Sang-uk Ryu, Daejeon Metropolitan, KR;
Ho-jun Lee, Daejeon Metropolitan, KR;
Eun-sil Lee, Legal Representative, Daejeon Metropolitan, KR;
Seung-lac MA, Chungju-si, KR;
Myeong-geun Ko, Chungju-si, KR;
Jang-Yeon Hwang, Seoul, KR;
Dong-Ryul Kim, Daejeon Metropolitan, KR;
Gi-Cheul Kim, Daejeon Metropolitan, KR;
Sang-Uk Ryu, Daejeon Metropolitan, KR;
Ho-Jun Lee, Daejeon Metropolitan, KR;
Eun-Sil Lee, legal representative, Daejeon Metropolitan, KR;
Seung-Lac Ma, Chungju-si, KR;
Myeong-Geun Ko, Chungju-si, KR;
LG Chem, Ltd., Seoul, KR;
Abstract
The present invention provides a multiple layer that comprises two or more first inorganic material layers; and one or more second inorganic material layers that are positioned between the two first inorganic material layers and have the thickness of less than 5 nm, in which the first inorganic material layer is formed of one or more materials that are selected from silicon oxides, silicon carbide, silicon nitride, aluminum nitride and ITO, and the second inorganic material layer is formed of one or more materials that are selected from magnesium, calcium, aluminum, gallium, indium, zinc, tin, barium, and oxides and fluorides thereof, a multiple film that comprises the multiple layer, and an electronic device that comprises the multiple film.