The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 21, 2012

Filed:

Nov. 06, 2006
Applicants:

Ho-yong Lee, Kangnam-gu, KR;

Sung-min Lee, Cheonan-si, KR;

Dong-ho Kim, Seongdong-gu, KR;

Inventors:

Ho-Yong Lee, Kangnam-gu, KR;

Sung-Min Lee, Cheonan-si, KR;

Dong-Ho Kim, Seongdong-gu, KR;

Assignee:

Ceracomp Co., Ltd., Choongchungnam-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 41/18 (2006.01); H01L 41/00 (2006.01); C04B 35/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A piezoelectric single crystal and piezoelectric and dielectric application parts using the same are provided, which have all of high dielectric constant K, high piezoelectric constants (dand k), high phase transition temperatures (Tc and T), high coercive electric field Ec and improved mechanical properties and thus can be used in high temperature ranges and high voltage conditions. Furthermore, the piezoelectric single crystals are produced by the solid-state single crystal growth adequate for mass production of single crystals and the single crystal composition is developed not to contain expensive raw materials so that the piezoelectric single crystals can be easily commercialized. With the piezoelectric single crystals and piezoelectric single crystal application parts, the piezoelectric and dielectric application parts using the piezoelectric single crystals of excellent properties can be produced and used in the wide temperature range.


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