The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2012
Filed:
Aug. 29, 2008
Pearl P. Cheng, Los Altos, CA (US);
Harry S. Luan, Saratoga, CA (US);
Chinh Vo, San Jose, CA (US);
Chih-chieh (Steve) Wang, Fremont, CA (US);
Pearl P. Cheng, Los Altos, CA (US);
Harry S. Luan, Saratoga, CA (US);
Chinh Vo, San Jose, CA (US);
Chih-Chieh (Steve) Wang, Fremont, CA (US);
Kilopass Technology, Inc., Santa Clara, CA (US);
Abstract
A method and system for enabling auto shut-off of programming of a non-volatile memory cell is disclosed. The system includes a memory array having a plurality of memory cells, each cell storing one bit of data. During the programming process, programming signals are applied to the target memory cells. A predefined period of time after the programming signals are applied, the auto shut-off system begins sensing an output signal from the memory cell. After the system detects an output signal from the memory cell, the system waits for a second predefined period of time before turning off the programming voltages. The system may be configured to sense an output voltage from the memory cell. The system then compares the output voltage to a reference voltage in order to detect when the cell is programmed. Alternatively, the system may sense an output current from the memory cell. The system then compares the output current to a reference current to detect when the cell is programmed.