The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2012
Filed:
Feb. 23, 2009
Applicants:
Susumu Ogawa, Cambridge, GB;
Andrew Troup, Woodhead, GB;
David Williams, Cambridge, GB;
Hiroshi Fukuda, Tokyo, JP;
Inventors:
Susumu Ogawa, Cambridge, GB;
Andrew Troup, Woodhead, GB;
David Williams, Cambridge, GB;
Hiroshi Fukuda, Tokyo, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/33 (2006.01);
U.S. Cl.
CPC ...
Abstract
A device capable of exhibiting the extraordinary magnetoresistance (EMR) effect includes an elongate channel formed of silicon. A conductor comprising heavily doped silicon is connected to the channel along one side of the channel so as to provide a shunt. A gate arrangement including a gate electrode is provided on the channel. Applying a bias of appropriate polarity and sufficient magnitude to the gate electrode results in the formation of an inversion layer in the channel.